Solution-sheared ultrathin films for highly-sensitive ammonia detection using organic thin-film transistors

Qing Meng; Fengjiao Zhang; Yaping Zang; Dazhen Huang; Ye Zou; Jie Liu; Guangyao Zhao; Zongrui Wang; Deyang Ji; Chong-an Di; Wenping Hu; Daoben Zhu

doi:10.1039/C3TC31762E

Solution-sheared ultrathin films for highly-sensitive ammonia detection using organic thin-film transistors†

Qing Meng,*^a Fengjiao Zhang,^ab Yaping Zang,^ab Dazhen Huang,^ab Ye Zou,^a Jie Liu,^ab Guangyao Zhao,^ab Zongrui Wang,^ab Deyang Ji,^ab Chong-an Di,*^a Wenping Hu*^a and Daoben Zhu^a

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* Corresponding authors

^a Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, P. R. China
E-mail: mengq@iccas.ac.cn, dicha@iccas.ac.cn, huwp@iccas.ac.cn
Tel: +86-10-62552061

^b Graduate School of Chinese Academy of Sciences, Beijing, P. R. China

Abstract

The solution-shearing technique is utilized to fabricate large-area, ultrathin and continuous films of 1,4-bis((5′-hexyl-2,2′-bithiophen-5-yl)ethynyl)benzene (HTEB) for high-performance organic thin-film transistors (OTFTs), based on which highly sensitive, highly selective and reversible gas sensors exhibit outstanding response to NH₃, with detection limit as low as 100 ppb.

This article is part of the themed collection: Flexible Electronics

Journal of Materials Chemistry C

Solution-sheared ultrathin films for highly-sensitive ammonia detection using organic thin-film transistors†

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Solution-sheared ultrathin films for highly-sensitive ammonia detection using organic thin-film transistors

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