Lowering contact resistance by SWCNT–Al bilayer electrodes in solution processable metal-oxide thin film transistor

Abstract

A single-wall carbon nanotube–aluminium (SWCNT)–Al bilayer was developed as an electrode for a high-performance solution processable thin film transistor (TFT). The contact resistance was systematically lowered by inserting an Al layer between the SWCNTs and the indium oxide. The performance of the device was considerably enhanced by adopting the SWCNT–Al bilayer electrodes, because of the enlargement of the contact area of the electrodes and the formation of an Ohmic contact between the electrodes and the semiconductor. The TFT using the SWCNT–Al bilayer electrodes shows a threshold voltage of 0.45 V, a mobility of 4.50 cm² V⁻¹ s and an I_on/I_off of 6.86 × 10⁵.