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Issue 40, 2014
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Electrochemical synthesis of flat-[Ga13−xInx3-OH)6(μ-OH)18(H2O)24(NO3)15] clusters as aqueous precursors for solution-processed semiconductors

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Abstract

Flat-[Ga133-OH)6(μ-OH)18(H2O)24](NO3)15 (Ga13) and heterometallic [Ga13−xInx3-OH)6(μ-OH)18(H2O)24](NO3)15 (x = 5, 4) clusters were synthesized by the electrolysis of metal nitrate salt solutions to directly form, without purification, aqueous precursor inks for InxGa13−xOy semiconducting films in <2 h. Raman spectroscopy and 1H-NMR spectroscopy confirm the presence of [Ga13−xInx3-OH)6(μ-OH)18(H2O)24(NO3)15] clusters. Bottom-gate thin-film transistors were fabricated using ∼15 nm-thick Ga13−xInxOy films as the active channel layer, displaying turn-on voltages of −2 V, and on/off current ratios greater than 106. The average channel mobility of the transistors fabricated from the cluster solutions generated by electrolysis was ∼5 cm−2 V−1s−1 which was more than twice that of transistors fabricated from control solutions with the simple nitrate salt precursors of ∼2 cm−2 V−1s−1. Electrochemical cluster synthesis thus provides a simple and direct route to aqueous precursors for solution-processed inorganic electronics.

Graphical abstract: Electrochemical synthesis of flat-[Ga13−xInx(μ3-OH)6(μ-OH)18(H2O)24(NO3)15] clusters as aqueous precursors for solution-processed semiconductors

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Publication details

The article was received on 25 Jun 2014, accepted on 29 Aug 2014 and first published on 29 Aug 2014


Article type: Communication
DOI: 10.1039/C4TC01354A
Citation: J. Mater. Chem. C, 2014,2, 8492-8496
  • Open access: Creative Commons BY license
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    Electrochemical synthesis of flat-[Ga13−xInx3-OH)6(μ-OH)18(H2O)24(NO3)15] clusters as aqueous precursors for solution-processed semiconductors

    M. E. Carnes, C. C. Knutson, A. Nadarajah, M. N. Jackson, A. F. Oliveri, K. M. Norelli, B. M. Crockett, S. R. Bauers, H. A. Moreno-Luna, B. N. Taber, Daniel. J. Pacheco, J. Z. Olson, K. R. Brevick, C. E. Sheehan, D. W. Johnson and S. W. Boettcher, J. Mater. Chem. C, 2014, 2, 8492
    DOI: 10.1039/C4TC01354A

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