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Issue 36, 2014
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Ambipolar field-effect transistors using conjugated polymers with structures of bilayer, binary blends, and paralleled nanofibers

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Abstract

In this paper, we explore ambipolar organic field-effect transistor (FET) characteristics using bilayer, binary blends, and paralleled nanofibers of poly(3-hexylthiophene) (P3HT; p-type) and poly{[N,N′-bis(2-decyltetradecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl] -alt-(thiophene-2,5-diyl)} (P(NDI-T); n-type). Ambipolar transistors with paralleled single P3HT and P(NDI-T) electrospun nanofibers showed high and well-balanced mobilities of 8.25 × 10−2 cm2 V−1 s−1 for holes and 7.51 × 10−2 cm2 V−1 s−1 for electrons with Ion/Ioff ≈ 104. This ambipolar nanofiber FET was also applied to a complementary inverter with a gain of up to 20.5.

Graphical abstract: Ambipolar field-effect transistors using conjugated polymers with structures of bilayer, binary blends, and paralleled nanofibers

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Publication details

The article was received on 14 Jun 2014, accepted on 21 Jul 2014 and first published on 23 Jul 2014


Article type: Communication
DOI: 10.1039/C4TC01267D
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Citation: J. Mater. Chem. C, 2014,2, 7489-7493
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    Ambipolar field-effect transistors using conjugated polymers with structures of bilayer, binary blends, and paralleled nanofibers

    C. Lu, J. Wang, H. Chang, Y. Chiu, H. Chen, H. Wu, T. Higashihara and W. Chen, J. Mater. Chem. C, 2014, 2, 7489
    DOI: 10.1039/C4TC01267D

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