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Issue 15, 2014
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Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells

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Abstract

We report the correlation of the electrical properties of the p-doped layer in an interconnection unit with the performance of tandem organic photovoltaic (TOPV) cells where the interconnection unit (ICU) is composed of an electron-transporting layer (ETL)/metal/p-doped hole-transporting layer (p-HTL) by systematically varying the doping concentration of the p-HTL in the ICU. The open circuit voltage is significantly increased as the doping concentration of the p-HTL increases due to the reduction of the difference between the Fermi level and the highest occupied molecular orbital level of the p-HTL. The fill factor is also enhanced with increases in the doping concentration of the p-HTL due to the enhancement of the conductivity in the p-HTL and efficient hole transport at the interface between Ag and the p-HTL through the tunneling process, rather than through the thermionic process.

Graphical abstract: Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells

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Publication details

The article was received on 11 Nov 2013, accepted on 28 Jan 2014 and first published on 29 Jan 2014


Article type: Paper
DOI: 10.1039/C3TA14628F
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Citation: J. Mater. Chem. A, 2014,2, 5450-5454
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    Correlation of the electronic structure of an interconnection unit with the device performance of tandem organic solar cells

    H. Shim, J. Chang, S. Yoo, Chih-I. Wu and J. Kim, J. Mater. Chem. A, 2014, 2, 5450
    DOI: 10.1039/C3TA14628F

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