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Issue 17, 2014
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ScGaN and ScAlN: emerging nitride materials

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Abstract

This review addresses the recent development and future prospects for Sc-based III-nitride alloys in energy-efficient device applications. Wurtzite-structure ScAlN and ScGaN alloys are wide band-gap semiconductors which can be stabilised at the low Sc contents relevant to devices, can be grown epitaxially, include the lattice-matched Sc0.18Al0.82N/GaN system, retain direct band gaps in the near-UV region up to 25% ScN and 50% ScN respectively, and should offer significantly higher exciton binding energies and piezoelectric coefficients compared to other III-nitrides. These properties greatly expand the options for band gap and polarisation engineering required for efficient optoelectronic devices, high-electron mobility transistors and energy-harvesting devices.

Graphical abstract: ScGaN and ScAlN: emerging nitride materials

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Publication details

The article was received on 18 Oct 2013, accepted on 03 Jan 2014 and first published on 14 Feb 2014


Article type: Feature Article
DOI: 10.1039/C3TA14189F
Author version available: Download Author version (PDF)
Citation: J. Mater. Chem. A, 2014,2, 6042-6050
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    ScGaN and ScAlN: emerging nitride materials

    M. A. Moram and S. Zhang, J. Mater. Chem. A, 2014, 2, 6042
    DOI: 10.1039/C3TA14189F

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