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Issue 110, 2014
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Symmetry-dependent band gap opening in graphene induced by g-C3N4 substrates

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Abstract

Opening the band gap in graphene can significantly broaden its applications in electronic devices. By introducing four types of graphene-like carbon nitride (g-C3N4) as the substrate of graphene, we reveal, with first principles calculations, a symmetry and size dependent band gap opening in graphene. On the one hand, for a substrate with a 3-fold rotational symmetry, a small C3N4 unit can cause a large value of the band gap in the graphene layer. On the other hand, the band gap also depends on the symmetry of the substrate. A 3-fold symmetry induces a relatively small band gap, while rectangular and oblique symmetries result in a relatively large band gap opening in graphene but cause a much heavier effective mass of charge carriers. The former case is due to the nonequivalence of sub-lattices in graphene induced by the substrate, while for the latter case, interfacial hybridization plays the main role in band gap opening in graphene. Our theoretical findings could pave the way for the use of graphene-based semiconductor devices.

Graphical abstract: Symmetry-dependent band gap opening in graphene induced by g-C3N4 substrates

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Publication details

The article was received on 17 Oct 2014, accepted on 17 Nov 2014 and first published on 18 Nov 2014


Article type: Paper
DOI: 10.1039/C4RA12626B
Author version available: Download Author version (PDF)
Citation: RSC Adv., 2014,4, 64577-64582
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    Symmetry-dependent band gap opening in graphene induced by g-C3N4 substrates

    J. Ren, R. Zhang, Z. Ding and M. A. Van Hove, RSC Adv., 2014, 4, 64577
    DOI: 10.1039/C4RA12626B

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