Vapour-based processing of hole-conductor-free CH3NH3PbI3 perovskite/C60 fullerene planar solar cells

Hao Hu; Dong Wang; Yuanyuan Zhou; Jiliang Zhang; Siliu Lv; Shuping Pang; Xiao Chen; Zhihong Liu; Nitin P. Padture; Guanglei Cui

doi:10.1039/C4RA03820G

Vapour-based processing of hole-conductor-free CH₃NH₃PbI₃ perovskite/C₆₀ fullerene planar solar cells†

Hao Hu,^ac Dong Wang,^ac Yuanyuan Zhou,^b Jiliang Zhang,^d Siliu Lv,^a Shuping Pang,*^a Xiao Chen,^a Zhihong Liu,^a Nitin P. Padture^b and Guanglei Cui*^a

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* Corresponding authors

^a Qingdao Institute of Bioenergy and Bioprocess Technology, Chinese Academy of Sciences, Qingdao 266101, P.R. China

^b School of Engineering, Brown University, Providence, RI 02912, USA

^c University of Chinese Academy of Sciences, Beijing 100049, P. R. China

^d Department of Physics and Materials Science, City University of Hong Kong, SAR, Hong Kong

Abstract

A new sequential-vapour-deposition method is demonstrated for the growth of high-quality CH₃NH₃PbI₃ perovskite films. This has enabled the all-vapour, low-temperature fabrication of hole-conductor-free planar perovskite solar cells consisting of only a CH₃NH₃PbI₃/C₆₀ bi-layer sandwiched between two electrical contacts, with a power conversion efficiency of 5.4%.

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Vapour-based processing of hole-conductor-free CH₃NH₃PbI₃ perovskite/C₆₀ fullerene planar solar cells†

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Vapour-based processing of hole-conductor-free CH₃NH₃PbI₃ perovskite/C₆₀ fullerene planar solar cells

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