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Issue 7, 2014
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Origin of enhanced thermoelectric properties of doped CrSi2

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Abstract

Using first principles density functional theory, we report for CrSi2, a linear relationship between thermodynamic charge state transition levels of defects and maxima of thermopower Tm, thus proposing a unique way of tuning thermoelectric properties. We show for doped CrSi2 that the peak of thermopower occurs at the temperature which corresponds to the position of the defect transition level. Therefore, by modifying the defect transition level, a thermoelectric material with a given operational temperature can be designed.

Graphical abstract: Origin of enhanced thermoelectric properties of doped CrSi2

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Publication details

The article was received on 02 Sep 2013, accepted on 21 Oct 2013 and first published on 23 Oct 2013


Article type: Paper
DOI: 10.1039/C3RA44822C
Citation: RSC Adv., 2014,4, 3482-3486
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    Origin of enhanced thermoelectric properties of doped CrSi2

    T. Pandey and A. K. Singh, RSC Adv., 2014, 4, 3482
    DOI: 10.1039/C3RA44822C

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