Jump to main content
Jump to site search

Issue 5, 2014
Previous Article Next Article

Origin of nanohole formation by etching based on droplet epitaxy

Author affiliations

Abstract

Creating and manipulating materials at the nanoscale with controllable size, shape and nucleation site is an important task to meet the urgent demands for quantum structures with designed properties. In the last ten years, droplet epitaxy has been emerging as a versatile fabrication method for various complex nanostructures, such as quantum dots, quantum rings, double-rings, and so on. However, there is a lack of understanding of the deep nanohole formation based on droplet epitaxy at a high substrate temperature. Here we fabricate self-organized GaAs nanoholes by Ga droplet etching at high temperature based on droplet epitaxy, and they present good optoelectronic properties and have promising applications in fabrication of nanodevices due to their unique topology. A theoretical model is correspondingly proposed to explain the basic mechanism and simulate the time evolution of the nanohole structures. Our analysis shows that the morphology of the nanohole nanostructures can be well controlled through regulating experimental conditions.

Graphical abstract: Origin of nanohole formation by etching based on droplet epitaxy

Back to tab navigation

Publication details

The article was received on 14 Nov 2013, accepted on 28 Nov 2013 and first published on 03 Dec 2013


Article type: Paper
DOI: 10.1039/C3NR06064K
Citation: Nanoscale, 2014,6, 2675-2681
  •   Request permissions

    Origin of nanohole formation by etching based on droplet epitaxy

    X. Li, J. Wu, Z. M. Wang, B. Liang, J. Lee, E. Kim and G. J. Salamo, Nanoscale, 2014, 6, 2675
    DOI: 10.1039/C3NR06064K

Search articles by author

Spotlight

Advertisements