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Issue 5, 2014
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Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor

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Abstract

We describe a method for synthesizing large-area and uniform molybdenum disulfide films, with control over the layer number, on insulating substrates using a gas phase sulfuric precursor (H2S) and a molybdenum metal source. The metal layer thickness was varied to effectively control the number of layers (2 to 12) present in the synthesized film. The films were grown on wafer-scale Si/SiO2 or quartz substrates and displayed excellent uniformity and a high crystallinity over the entire area. Thin film transistors were prepared using these materials, and the performances of the devices were tested. The devices displayed an on/off current ratio of 105, a mobility of 0.12 cm2 V−1 s−1 (mean mobility value of 0.07 cm2 V−1 s−1), and reliable operation.

Graphical abstract: Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor

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Publication details

The article was received on 11 Nov 2013, accepted on 09 Dec 2013 and first published on 19 Dec 2013


Article type: Paper
DOI: 10.1039/C3NR05993F
Citation: Nanoscale, 2014,6, 2821-2826
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    Synthesis of wafer-scale uniform molybdenum disulfide films with control over the layer number using a gas phase sulfur precursor

    Y. Lee, J. Lee, H. Bark, I. Oh, G. H. Ryu, Z. Lee, H. Kim, J. H. Cho, J. Ahn and C. Lee, Nanoscale, 2014, 6, 2821
    DOI: 10.1039/C3NR05993F

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