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Issue 21, 2014
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Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

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Abstract

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

Graphical abstract: Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

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Publication details

The article was received on 25 Jul 2014, accepted on 02 Sep 2014 and first published on 04 Sep 2014


Article type: Paper
DOI: 10.1039/C4NR04228J
Citation: Nanoscale, 2014,6, 12792-12797
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    Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

    C. Huang, F. Al-Saab, Y. Wang, J. Ou, J. C. Walker, S. Wang, B. Gholipour, R. E. Simpson and D. W. Hewak, Nanoscale, 2014, 6, 12792
    DOI: 10.1039/C4NR04228J

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