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Issue 22, 2014
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Confinement-modulated junctionless nanowire transistors for logic circuits

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Abstract

We report the controlled formation of nanoscale constrictions in junctionless nanowire field-effect transistors that efficiently modulate the flow of the current in the nanowire. The constrictions act as potential barriers and the height of the barriers can be selectively tuned by gates, making the device concept compatible with the crossbar geometry in order to create logic circuits. The functionality of the architecture and the reliability of the fabrication process are demonstrated by designing decoder devices.

Graphical abstract: Confinement-modulated junctionless nanowire transistors for logic circuits

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Publication details

The article was received on 17 Jul 2014, accepted on 17 Sep 2014 and first published on 18 Sep 2014


Article type: Communication
DOI: 10.1039/C4NR04047C
Citation: Nanoscale, 2014,6, 13446-13450
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    Confinement-modulated junctionless nanowire transistors for logic circuits

    F. Vaurette, R. Leturcq, S. Lepilliet, B. Grandidier and D. Stiévenard, Nanoscale, 2014, 6, 13446
    DOI: 10.1039/C4NR04047C

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