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Issue 11, 2014
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Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

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Abstract

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO2 ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

Graphical abstract: Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

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Publication details

The article was received on 24 Jan 2014, accepted on 16 Mar 2014 and first published on 26 Mar 2014


Article type: Communication
DOI: 10.1039/C4NR00500G
Citation: Nanoscale, 2014,6, 5698-5702
  • Open access: Creative Commons BY-NC license
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    Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

    L. Zhao, H.-Y. Chen, S.-C. Wu, Z. Jiang, S. Yu, T.-H. Hou, H.-S. P. Wong and Y. Nishi, Nanoscale, 2014, 6, 5698
    DOI: 10.1039/C4NR00500G

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