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Issue 11, 2014
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A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions

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Abstract

Recently, self-powered devices based on a p–n heterojunction have been widely reported, but there are few reports about self-powered UV detectors based on a single ZnO microwire/p-Si film with double heterojunctions. Compared with the common p–n heterojunction type devices, the fabricated devices with double heterojunctions based on a single n-type ZnO microwire and a p-type Si film exhibited excellent electrical performance such as an ideal rectification behaviour and a low turn-on voltage. At zero bias, the fabricated device can deliver a photocurrent of 71 nA, a high photosensitivity of about 3.17 × 103 under UV light (0.58 mW cm−2) illumination and a fast rising and falling time of both less than 0.3 s. Furthermore, the photocurrent increased with the rising of the optical intensity at low power intensities. The physical mechanism has been explained by energy band diagrams.

Graphical abstract: A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions

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Publication details

The article was received on 02 Dec 2013, accepted on 14 Mar 2014 and first published on 21 Mar 2014


Article type: Paper
DOI: 10.1039/C3NR06356A
Author version available: Download Author version (PDF)
Citation: Nanoscale, 2014,6, 6025-6029
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    A self-powered ultraviolet detector based on a single ZnO microwire/p-Si film with double heterojunctions

    J. Qi, X. Hu, Z. Wang, X. Li, W. Liu and Y. Zhang, Nanoscale, 2014, 6, 6025
    DOI: 10.1039/C3NR06356A

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