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Issue 3, 2014
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Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation

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Abstract

Monolayer transition metal dichalcogenides recently emerged as a new family of two-dimensional materials potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of a finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, constructing a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of a MoS2 monolayer induces a semiconductor–metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS2 surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or an interconnect without compromising the mechanical and structural integrity of the monolayer.

Graphical abstract: Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation

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Publication details

The article was received on 30 Sep 2013, accepted on 15 Nov 2013 and first published on 22 Nov 2013


Article type: Paper
DOI: 10.1039/C3NR05218D
Citation: Nanoscale, 2014,6, 1691-1697
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    Constructing metallic nanoroads on a MoS2 monolayer via hydrogenation

    Y. Cai, Z. Bai, H. Pan, Y. P. Feng, B. I. Yakobson and Y. Zhang, Nanoscale, 2014, 6, 1691
    DOI: 10.1039/C3NR05218D

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