Issue 3, 2014

High performance organic photovoltaics with zinc oxide and graphene oxide buffer layers

Abstract

We report air stable inverted organic photovoltaics (OPVs) incorporating graphene oxide (GO) and solution processed zinc oxide (ZnO) as hole transport and electron transport layers, respectively. Both the hole transport layer and the electron transport layer (HTL and ETL) are of advantage in high transparency and environmental stability. The use of GO and ZnO in poly(2,7-carbazole) derivative (PCDTBT):fullerene derivative (PC70BM)-based inverted OPVs leads to an improved device stability and enhanced high open circuit voltage (Voc) of 0.81 V, a short-circuit current density (Jsc) of 14.10 mA cm−2, and a fill factor (FF) of 54.44 along with a power conversion efficiency of 6.20%.

Graphical abstract: High performance organic photovoltaics with zinc oxide and graphene oxide buffer layers

Article information

Article type
Paper
Submitted
03 Sep 2013
Accepted
09 Nov 2013
First published
14 Nov 2013

Nanoscale, 2014,6, 1537-1544

High performance organic photovoltaics with zinc oxide and graphene oxide buffer layers

A. R. B. Mohd Yusoff, H. P. Kim and J. Jang, Nanoscale, 2014, 6, 1537 DOI: 10.1039/C3NR04709A

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