Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 3, 2014
Previous Article Next Article

Rate limiting interfacial hole transfer in Sb2S3 solid-state solar cells

Author affiliations

Abstract

Transfer of photogenerated holes from the absorber species to the p-type hole conductor is fundamental to the performance of solid-state sensitized solar cells. In this study, we comprehensively investigate hole diffusion in the Sb2S3 absorber and hole transfer across the Sb2S3–CuSCN interface in the TiO2–Sb2S3–CuSCN system using femtosecond transient absorption spectroscopy, carrier diffusion modeling, and photovoltaic performance studies. Transfer of photogenerated holes from Sb2S3 to CuSCN is found to be dependent on Sb2S3 film thickness, a trend attributed to diffusion in the Sb2S3 absorber. However, modeling reveals that this process is not adequately described by diffusion limitations alone as has been assumed in similar systems. Therefore, both diffusion and transfer across the Sb2S3–CuSCN interface are taken into account to describe the hole transfer dynamics. Modeling of diffusion and interfacial hole transfer effects reveal that interfacial hole transfer, not diffusion, is the predominant factor dictating the magnitude of the hole transfer rate, especially in thin (<20 nm) Sb2S3 films. Lastly, the implications of these results are further explored by photovoltaic measurements using planar TiO2–Sb2S3–CuSCN solar cells to elucidate the role of hole transfer in photovoltaic performance.

Graphical abstract: Rate limiting interfacial hole transfer in Sb2S3 solid-state solar cells

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 25 Nov 2013, accepted on 27 Jan 2014 and first published on 27 Jan 2014


Article type: Paper
DOI: 10.1039/C3EE43844A
Citation: Energy Environ. Sci., 2014,7, 1148-1158
  •   Request permissions

    Rate limiting interfacial hole transfer in Sb2S3 solid-state solar cells

    J. A. Christians, D. T. Leighton and P. V. Kamat, Energy Environ. Sci., 2014, 7, 1148
    DOI: 10.1039/C3EE43844A

Search articles by author