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Paper

Insulator–half metal transition driven by hole doping: a density functional study of Sr-doped La2VMnO6

Ningning Zu,a   Jing Wang,b   Ying Wang*a and   Zhijian Wu*a  
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a
State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022, P. R. China
E-mail: ywang_2012@ciac.ac.cn, zjwu@ciac.ac.cn;
Fax: +86-431-85698041 ;
Tel: +86-431-85262801
b
Key Laboratory of Applied Chemistry, Yanshan University, Qinhuangdao 066004, P. R. China
Dalton Trans., 2014,43, 8698-8702

DOI: 10.1039/C4DT00207E
Received 21 Jan 2014, Accepted 09 Apr 2014
First published online 09 Apr 2014
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