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Issue 41, 2014
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Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector

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Abstract

The electronic and photoconductive characteristics of CdTe nanowire-based field effect transistors were studied systematically. The electrical characterization of a single CdTe nanowire FET verifies p-type behavior. The CdTe NW FETs respond to visible-near infrared (400–800 nm) incident light with a fast, reversible and stable response characterized by a high responsivity (81 A W−1), photoconductive gain (∼2.5 × 104%) and reasonable response and decay times (0.7 s and 1 s, respectively). These results substantiate the potential of CdTe nanowire-based photodetectors in optoelectronic applications.

Graphical abstract: Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector

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Publication details

The article was received on 26 Jul 2014, accepted on 09 Sep 2014 and first published on 09 Sep 2014


Article type: Paper
DOI: 10.1039/C4CP03322A
Citation: Phys. Chem. Chem. Phys., 2014,16, 22687-22693
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    Single-crystalline CdTe nanowire field effect transistors as nanowire-based photodetector

    M. Shaygan, K. Davami, N. Kheirabi, C. K. Baek, G. Cuniberti, M. Meyyappan and J. Lee, Phys. Chem. Chem. Phys., 2014, 16, 22687
    DOI: 10.1039/C4CP03322A

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