Self-organization of Ge(111)/Al/glass structures through layer exchange in metal-induced crystallization

Abstract

We achieved the self-organization of Ge/Al/glass structures by using Al-induced layer exchange at 325 °C. The diffusion-limiting layers formed between Ge and Al significantly induced slow growth under thermal equilibrium conditions and thus allowed fabrication of an energetically stable (111)-oriented Ge layers with grains as large as 20 μm in size.