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Issue 36, 2014
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Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals

Degao Zhong,*ab  Bing Teng,*ab  Lifeng Cao,ab  Shiming Zhang,ab  Fei You,ab  Bingtao Zhang,ab  Jianhong Li,ac  Xueping Tian,ab  Chao Wang,ab  Yuyi Li,ab  Linxiang Hed  and  Romano A. Ruppef 
Author affiliations

* Corresponding authors

a College of Physics, Qingdao University, Qingdao, China
E-mail: qduzhdg@163.com, 5108tb@163.com
Fax: +86 10 85955977
Tel: +86 10 85953405

b Key Laboratory of Photonics Materials and Technology in Universities of Shandong (Qingdao University), China

c CRYSTECH Inc., Qingdao, China

d Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong

e TEDA Applied Physics School, Nankai University, Tianjin 300457, China

f Faculty of Physics, Vienna University, A-1090 Wien, Austria

Abstract

Polycrystalline materials of REVO4 (RE = Y, Lu, Yb) were synthesized by liquid-phase reaction. An Yb-doped Yb:Y0.71Lu0.29VO4 crystal was grown by the Czochralski method. Dislocations and low-angle boundaries were revealed by chemical etching and transmission electron microscopy (TEM). Continuous-wave (cw) laser action was achieved in the range of 1020.7–1029.0 nm by using a high-power diode laser as the pump source. A cw laser output power of 1.09 W with a slope efficiency of 21.6% was demonstrated for this 0.5 at.% Yb-doped Yb:Y0.79Lu0.21VO4 mixed crystal.

Graphical abstract: Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals

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Publication details

The article was received on 07 Jan 2014, accepted on 17 Jul 2014 and first published on 17 Jul 2014


Article type: Paper
DOI: 10.1039/C4CE00042K
Author version available: Download Author version (PDF)
Citation: CrystEngComm, 2014,16, 8406-8412
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    Synthesis, growth, defects and laser action of Yb:Y0.71Lu0.29VO4 crystals

    D. Zhong, B. Teng, L. Cao, S. Zhang, F. You, B. Zhang, J. Li, X. Tian, C. Wang, Y. Li, L. He and R. A. Rupp, CrystEngComm, 2014, 16, 8406
    DOI: 10.1039/C4CE00042K

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