Jump to main content
Jump to site search

Issue 14, 2014
Previous Article Next Article

Sheathed nanowires aligned by crystallographic periodicity: a possibility of cross-bar wiring in three-dimensional space

Author affiliations

Abstract

Because of the translational symmetry of crystal structures, crystal engineering may provide an opportunity for developing a three-dimensional and large-scale molecular memory array that is wired by sheathed nanowires with a cross-bar configuration, once a certain extent of designability is accomplished. This article discusses crystal structures involving ordered nanowire arrays that might be used for such a purpose. Some crystallographic symmetries and conduction/insulation properties required for wiring application are described, followed by the description of the structural and conducting properties of known sheathed nanowires with crystalline periodicity. The wires discussed here are made of wide range of materials including metal atoms, polymers, and organic radical species. Although most of the nanowire crystals show parallel alignments of the sheathed nanowires, several examples show cross-bar arrangements.

Graphical abstract: Sheathed nanowires aligned by crystallographic periodicity: a possibility of cross-bar wiring in three-dimensional space

Back to tab navigation

Publication details

The article was received on 05 Jun 2013, accepted on 03 Dec 2013 and first published on 04 Dec 2013


Article type: Highlight
DOI: 10.1039/C3CE41015C
Citation: CrystEngComm, 2014,16, 2857-2868
  •   Request permissions

    Sheathed nanowires aligned by crystallographic periodicity: a possibility of cross-bar wiring in three-dimensional space

    H. M. Yamamoto, CrystEngComm, 2014, 16, 2857
    DOI: 10.1039/C3CE41015C

Search articles by author

Spotlight

Advertisements