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Issue 72, 2014
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Electrodeposition of gallium in the presence of NH4Cl in an ionic liquid: hints for GaN formation

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Abstract

Group III–V semiconductors are important in the production of a variety of optoelectronic devices. At present, these semiconductors are synthesized by high vacuum techniques. Here we report on the electrochemical deposition of GaN which seems to form in quite a thin layer from NH4Cl and GaCl3 in an ionic liquid.

Graphical abstract: Electrodeposition of gallium in the presence of NH4Cl in an ionic liquid: hints for GaN formation

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Publication details

The article was received on 14 May 2014, accepted on 21 Jul 2014 and first published on 21 Jul 2014


Article type: Communication
DOI: 10.1039/C4CC03649B
Citation: Chem. Commun., 2014,50, 10438-10440
  • Open access: Creative Commons BY-NC license
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    Electrodeposition of gallium in the presence of NH4Cl in an ionic liquid: hints for GaN formation

    A. Lahiri, N. Borisenko, A. Borodin and F. Endres, Chem. Commun., 2014, 50, 10438
    DOI: 10.1039/C4CC03649B

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