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Anisotropic growth of the thiophene-based layer on Si(111)–B

Corresponding authors
Polytechnique Montréal, Engineering Physics Department and Regroupement québécois sur les matériaux de pointe (RQMP), Montréal, Canada
Institut FEMTO-ST, Université de Franche-Comté, CNRS, ENSMM, 32 Avenue de l'Observatoire, F-25044 Besancon, France
Chem. Commun., 2014,50, 5484-5486

DOI: 10.1039/C4CC01674B
Received 05 Mar 2014, Accepted 30 Mar 2014
First published online 03 Apr 2014

This article is part of themed collection: Scanning Probe Studies of Molecular Systems
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