Jump to main content
Jump to site search

Issue 41, 2014
Previous Article Next Article

Anisotropic growth of the thiophene-based layer on Si(111)–B

Author affiliations

Abstract

The formation of large assemblies on the Si(111)–B surface is discussed with the help of STM simulations and DFT calculations. Although highly regular assemblies of DTB10B along the Si row direction are observed, the existence of two herringbone isomers introduces a lower periodicity within the 2D molecular network. The formation of herringbone units is explained by weak intermolecular interactions while the 1D assembling depends mainly on the interactions of the C10 side chains with the Si(111)–B surface.

Graphical abstract: Anisotropic growth of the thiophene-based layer on Si(111)–B

Back to tab navigation

Supplementary files

Publication details

The article was received on 05 Mar 2014, accepted on 30 Mar 2014 and first published on 03 Apr 2014


Article type: Communication
DOI: 10.1039/C4CC01674B
Citation: Chem. Commun., 2014,50, 5484-5486
  •   Request permissions

    Anisotropic growth of the thiophene-based layer on Si(111)–B

    A. Rochefort, Y. Makoudi, A. Maillard, J. Jeannoutot, J. Blier, F. Chérioux and F. Palmino, Chem. Commun., 2014, 50, 5484
    DOI: 10.1039/C4CC01674B

Search articles by author

Spotlight

Advertisements