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Issue 23, 2014
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Ag2S–AgInS2: p–n junction heteronanostructures with quasi type-II band alignment

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Abstract

We report here the fabrication of a p–n junction diode in a single nanostructure by synthesizing a heterostructure involving n-type AgInS2 and p-type Ag2S. The quasi type-II band alignment between these ternary–binary semiconductors in the p–n junction heterostructures also slows down the carrier recombination rate and the heterostructures show rectification behavior. Hence, they can be used as an active material for fabrication of bulk heterojunction photovoltaic devices without any additional semiconductor material or dye required for charge separation or formation of a p–n junction.

Graphical abstract: Ag2S–AgInS2: p–n junction heteronanostructures with quasi type-II band alignment

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Publication details

The article was received on 21 Nov 2013, accepted on 23 Dec 2013 and first published on 24 Dec 2013


Article type: Communication
DOI: 10.1039/C3CC48903E
Citation: Chem. Commun., 2014,50, 3074-3077
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    Ag2S–AgInS2: p–n junction heteronanostructures with quasi type-II band alignment

    R. Bose, G. Manna, S. Jana and N. Pradhan, Chem. Commun., 2014, 50, 3074
    DOI: 10.1039/C3CC48903E

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