Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance upgrade on Thursday 4th of May 2017 from 8.00am to 9.00am (BST).

During this time our websites will be offline temporarily. If you have any questions please use the feedback button on this page. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 22, 2014
Previous Article Next Article

Facile assembly of n-SnO2 nanobelts–p-NiO heterojunctions with enhanced ultraviolet photoresponse

Author affiliations

Abstract

We present a highly transparent heterojunction photodiode by precisely aligning n-type SnO2 nanobelts on top of a p-type NiO thin film. This p–n junction diode demonstrates stable rectifying characteristics as well as greatly enhanced ultraviolet photoresponse, which exhibits an ultrahigh photosensitivity of up to 105 with accelerated response speed under reverse bias.

Graphical abstract: Facile assembly of n-SnO2 nanobelts–p-NiO heterojunctions with enhanced ultraviolet photoresponse

Back to tab navigation
Please wait while Download options loads

Supplementary files

Publication details

The article was received on 13 Oct 2013, accepted on 27 Nov 2013 and first published on 29 Nov 2013


Article type: Communication
DOI: 10.1039/C3CC47860B
Citation: Chem. Commun., 2014,50, 2847-2850
  •   Request permissions

    Facile assembly of n-SnO2 nanobelts–p-NiO heterojunctions with enhanced ultraviolet photoresponse

    S. Huang, H. Wu, K. Matsubara, J. Cheng and W. Pan, Chem. Commun., 2014, 50, 2847
    DOI: 10.1039/C3CC47860B

Search articles by author