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Issue 40, 2014
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Furan fused V-shaped organic semiconducting materials with high emission and high mobility

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Abstract

We report a facile synthetic protocol for preparation of dinaphtho[2,3-b:2′,3′-d]furan (DNF–V) derivatives. DNF–V derivatives showed high emissive behaviour in solid. A solution-crystallized transistor based on alkylated DNF–V derivatives showed an excellent carrier mobility of up to 1.3 cm2 V−1 s−1, thereby proving to be a new solution-processable active organic semiconductor with high emission and high mobility.

Graphical abstract: Furan fused V-shaped organic semiconducting materials with high emission and high mobility

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Publication details

The article was received on 02 Oct 2013, accepted on 08 Nov 2013 and first published on 08 Nov 2013


Article type: Communication
DOI: 10.1039/C3CC47577H
Citation: Chem. Commun., 2014,50, 5342-5344
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    Furan fused V-shaped organic semiconducting materials with high emission and high mobility

    K. Nakahara, C. Mitsui, T. Okamoto, M. Yamagishi, H. Matsui, T. Ueno, Y. Tanaka, M. Yano, T. Matsushita, J. Soeda, Y. Hirose, H. Sato, A. Yamano and J. Takeya, Chem. Commun., 2014, 50, 5342
    DOI: 10.1039/C3CC47577H

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