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Issue 6, 2014
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Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

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Abstract

Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

Graphical abstract: Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

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Publication details

The article was received on 22 Sep 2013, accepted on 06 Nov 2013 and first published on 27 Nov 2013


Article type: Communication
DOI: 10.1039/C3CC47239F
Citation: Chem. Commun., 2014,50, 682-684
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    Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

    X. Wang, J. Tong, X. Chen, B. Zhao, Z. Ren, D. Li, X. Zhuo, J. Zhang, H. Yi, C. Liu, F. Fang and S. Li, Chem. Commun., 2014, 50, 682
    DOI: 10.1039/C3CC47239F

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