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Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Corresponding authors
Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, People's Republic of China
Gold Medal Analytical & Testing Group, People's Republic of China
Chem. Commun., 2014,50, 682-684

DOI: 10.1039/C3CC47239F
Received 22 Sep 2013, Accepted 06 Nov 2013
First published online 27 Nov 2013
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