Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Xingfu Wang; Jinhui Tong; Xin Chen; Bijun Zhao; Zhiwei Ren; Danwei Li; Xiangjing Zhuo; Jun Zhang; Hanxiang Yi; Chao Liu; Fang Fang; Shuti Li

doi:10.1039/C3CC47239F

Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties†

Xingfu Wang,^a Jinhui Tong,^a Xin Chen,^a Bijun Zhao,^a Zhiwei Ren,^a Danwei Li,^a Xiangjing Zhuo,^a Jun Zhang,^a Hanxiang Yi,^a Chao Liu,^a Fang Fang^b and Shuti Li*^a

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^a Laboratory of Nanophotonic Functional Materials and Devices, Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou, People's Republic of China
E-mail: lishuti@scnu.edu.cn

^b Gold Medal Analytical & Testing Group, People's Republic of China

Abstract

Arrays of GaN-based nanowires have been synthesized on patterned silicon without a catalyst. The spatial density, length and average radius of the nanowires can be well-controlled. The GaN core contains two semipolar facets and a controllable polar facet. The nanowire heterostructures exhibit excellent laser behavior.

Chemical Communications

Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties†

Abstract

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Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

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