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Materials for optical, magnetic and electronic devices
Impact Factor 4.696 48 Issues per Year

Direct imprinting of MoS2 flakes on a patterned gate for nanosheet transistors

Corresponding authors
Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea
Fax: +82-2-392-1592
Tel: +82-2-2123-2842
School of Electrical and Electronic Engineering, Yonsei University, Seoul 120-749, Korea
J. Mater. Chem. C, 2013,1, 7803-7807

DOI: 10.1039/C3TC31796J
Received 11 Sep 2013, Accepted 04 Oct 2013
First published online 07 Oct 2013
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Journal of Materials Chemistry C - Information Point

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