Polythiophene–perylene diimide heterojunction field-effect transistors†
Abstract
Thin film field-effect transistors based on binary blends of poly(3-hexylthiophene) (P3HT) and two perylene diimide (PDI) derivatives with different
Maintenance work is planned from 09:00 BST to 12:00 BST on Saturday 28th September 2024.
During this time the performance of our website may be affected - searches may run slowly, some pages may be temporarily unavailable, and you may be unable to access content. If this happens, please try refreshing your web browser or try waiting two to three minutes before trying again.
We apologise for any inconvenience this might cause and thank you for your patience.
* Corresponding authors
a
Max Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany
E-mail:
pisula@mpip-mainz.mpg.de, muellen@mpip-mainz.mpg.de
Fax: +49 6131-379-350
Tel: +49 6131-379-151
b Wroclaw University of Technology, Polymer Engineering and Technology Division, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
c School of Chemistry, Bio21 Institute, University of Melbourne, 30 45 Flemington Road, Parkville, Victoria 3010, Australia
d Australian Synchrotron, 800 Blackburn Road, Clayton, Victoria 3168, Australia
Thin film field-effect transistors based on binary blends of poly(3-hexylthiophene) (P3HT) and two perylene diimide (PDI) derivatives with different
S. R. Puniredd, A. Kiersnowski, G. Battagliarin, W. Zajączkowski, W. W. H. Wong, N. Kirby, K. Müllen and W. Pisula, J. Mater. Chem. C, 2013, 1, 2433 DOI: 10.1039/C3TC00562C
This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content