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Issue 33, 2013
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Solution phase synthesis of silicon and germanium nanowires

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Abstract

Si and Ge nanowires have attracted widespread interest due to their suitability for photovoltaic, nanoelectronic, sensing and energy storage applications. As a result, a variety of synthetic protocols have emerged which include chemical vapour deposition and solution phase approaches. Early solution based approaches were hindered by the high nucleation temperatures required for Ge and Si NW formation but these have been overcome by using either supercritical fluid (SCF) approaches or high boiling point organic solvent (HBS) routes. This feature article examines the various synthetic strategies which have been successful in forming Ge and Si NWs within solvent based systems with particular emphasis on the reaction media and catalytic method employed.

Graphical abstract: Solution phase synthesis of silicon and germanium nanowires

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Publication details

The article was received on 11 Jun 2013, accepted on 02 Jul 2013 and first published on 09 Jul 2013


Article type: Feature Article
DOI: 10.1039/C3TC31123F
Citation: J. Mater. Chem. C, 2013,1, 4996-5007
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    Solution phase synthesis of silicon and germanium nanowires

    H. Geaney, E. Mullane and K. M. Ryan, J. Mater. Chem. C, 2013, 1, 4996
    DOI: 10.1039/C3TC31123F

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