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Issue 4, 2013
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Earth-abundant Cu-based chalcogenide semiconductors as photovoltaic absorbers

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Abstract

The materials Cu3PQ4 (Q = S, Se) of the enargite structure are studied as photovoltaic (PV) absorbers. Optical band gaps in the series Cu3PS4−xSex (0 ≤ x ≤ 4) are found to range from 2.36 eV (x = 0) to 1.35 eV (x = 4). Seebeck measurements on powder samples at room temperature yield large positive values (>100 μV K−1) indicating p-type behavior. Hole carrier concentrations are found in the range of 1016–1017 cm−3. Crystal structures of Cu3PS1.89Se2.11 and Cu3PS0.71Se3.29 are refined in the orthorhombic space group Pmn21 with the unit-cell parameters – Cu3PS1.89Se2.11: a = 7.5034(5) Å, b = 6.4951(5) Å, c = 6.2174(4) Å, and Cu3PS0.71Se3.29: a = 7.6164(6) Å, b = 6.5945(6) Å, c = 6.3107(5) Å. Photoelectrodes, fabricated from Cu3PSe4 single crystals, exhibit p-type photoresponse and yield open circuit voltages Voc = 0.12 V and short circuit currents Jsc = 0.25 mA cm−2 under 100 mW cm−2 of 660 nm illumination in a non-aqueous cobaltocene/cobaltocenium cell.

Graphical abstract: Earth-abundant Cu-based chalcogenide semiconductors as photovoltaic absorbers

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Publication details

The article was received on 03 Sep 2012, accepted on 30 Oct 2012 and first published on 30 Oct 2012


Article type: Paper
DOI: 10.1039/C2TC00106C
Citation: J. Mater. Chem. C, 2013,1, 657-662
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    Earth-abundant Cu-based chalcogenide semiconductors as photovoltaic absorbers

    V. Itthibenchapong, R. S. Kokenyesi, A. J. Ritenour, L. N. Zakharov, S. W. Boettcher, J. F. Wager and D. A. Keszler, J. Mater. Chem. C, 2013, 1, 657
    DOI: 10.1039/C2TC00106C

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