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Issue 5, 2013
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Radiation effects in GaN materials and devices

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Abstract

This article reviews the effects of radiation damage on GaN materials and devices such as light-emitting diodes and high electron mobility transistors. Protons, electrons and gamma rays typically produce point defects in GaN, in contrast to neutron damage which is dominated by more extended disordered regions. Regardless of the type of radiation, the electrical conductivity of the GaN is reduced through the introduction of trap states with thermal ionization energies deep in the forbidden bandgap. An important practical parameter is the carrier removal rate for each type of radiation since this determines the dose at which device degradation will occur. Many studies have shown that GaN is several orders of magnitude more resistant to radiation damage than GaAs, i.e. it can withstand radiation doses of at least two orders of magnitude higher than those degrading GaAs with a similar doping level. Many issues still have to be addressed. Among them are the strong asymmetry in carrier removal rates in n- and p-type GaN and interaction of radiation defects with Mg acceptors and the poor understanding of interaction of radiation defects in doped nitrides with the dislocations always present.

Graphical abstract: Radiation effects in GaN materials and devices

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Publication details

The article was received on 23 Aug 2012, accepted on 12 Sep 2012 and first published on 19 Sep 2012


Article type: Feature Article
DOI: 10.1039/C2TC00039C
Citation: J. Mater. Chem. C, 2013,1, 877-887
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    Radiation effects in GaN materials and devices

    A. Y. Polyakov, S. J. Pearton, P. Frenzer, F. Ren, L. Liu and J. Kim, J. Mater. Chem. C, 2013, 1, 877
    DOI: 10.1039/C2TC00039C

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