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Issue 10, 2013
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High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

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Abstract

In this work, a simple and rapid method to selectively sort semiconducting-SWCNTs (sc-SWCNTs) with large diameters using regioregular poly(3-dodecylthiophene) (rr-P3DDT) is presented. The absorption spectra and Raman spectra demonstrated that metallic species of arc discharge SWCNTs were effectively removed after interaction with rr-P3DDT in toluene with the aid of sonication and centrifugation. The sorted sc-SWCNT inks have been directly used to fabricate thin film transistors (TFTs) by dip-coating, drop-casting and inkjet printing. TFTs with an effective mobility of ∼34 cm2 V−1 s−1 and on–off ratios of ∼107 have been achieved by dip coating and drop casting the ink on SiO2/Si substrates with pre-patterned interdigitated gold electrode arrays. The printed devices also showed excellent electrical properties with a mobility of up to 6.6 cm2 V−1 s−1 and on–off ratios of up to 105. Printed inverters based on the TFTs have been constructed on glass substrates, showing a maximum voltage gain of 112 at a Vdd of −5 V. This work paves the way for making printable logic circuits for real applications.

Graphical abstract: High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

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Publication details

The article was received on 27 Dec 2012, accepted on 26 Mar 2013 and first published on 02 Apr 2013


Article type: Communication
DOI: 10.1039/C3NR34304A
Citation: Nanoscale, 2013,5, 4156-4161
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    High performance thin film transistors based on regioregular poly(3-dodecylthiophene)-sorted large diameter semiconducting single-walled carbon nanotubes

    C. Wang, L. Qian, W. Xu, S. Nie, W. Gu, J. Zhang, J. Zhao, J. Lin, Z. Chen and Z. Cui, Nanoscale, 2013, 5, 4156
    DOI: 10.1039/C3NR34304A

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