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Nanoscale

A high impact peer reviewed journal publishing experimental and theoretical work across the breadth of nanoscience and nanotechnology

Paper

Vertical nanowire array-based field effect transistors for ultimate scaling

G. Larrieu*a and   X.-L. Hanb  
*
Corresponding authors
a
LAAS, CNRS, Univ de Toulouse, 7 av. du Colonel Roche, 31077 Toulouse, France
E-mail: glarrieu@laas.fr
b
IEMN-UMR CNRS 8520, Avenue Poincare, 59650 Villeneuve d'Ascq, France
Nanoscale, 2013,5, 2437-2441

DOI: 10.1039/C3NR33738C
Received 20 Nov 2012, Accepted 21 Jan 2013
First published online 23 Jan 2013
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Supplementary Info