Issue 11, 2013
From the journal:

Nanoscale

The maximum limiting performance improved counter electrode based on a porous fluorine doped tin oxide conductive framework for dye-sensitized solar cells†

Chunxiong Bao,ab   Huan Huang,ab   Jie Yang,ab   Hao Gao,ab   Tao Yu,*ab   Jianguo Liu,ac   Yong Zhou,ab   Zhaosheng Liac  and  Zhigang Zouab  

* Corresponding authors

a National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, P. R. China
E-mail: yutao@nju.edu.cn

b Eco-Materials and Renewable Energy Research Center (ERERC), Department of Physics, Nanjing University, Nanjing 210093, P. R. China

c Department of Materials Science and Engineering, Nanjing University, Nanjing 210093, P. R. China

Abstract

A novel porous fluorine doped tin oxide (PFTO) conductive framework was introduced to counter electrodes (CEs) for dye-sensitized solar cells (DSSCs). When modified by platinum (Pt) or carbon (C), the PFTO conductive framework displays high catalytic activity to I−/I3− redox couples. Power conversion efficiencies of 6.09% and 5.81% were obtained in the DSSCs based on Pt and C modified PFTO CEs respectively, which were close to that of DSSCs with Pt coated FTO glass (6.05%) and Pt sheet (6.26%) CEs. Maximum limiting performances of the CEs were obtained from the polarization curves. The CE based on PFTO showed higher maximum limiting power conversion efficiency (∼20%) compared with the planar FTO substrate Pt CE (∼18%), with the increase of its surface area and electrocatalytic activity.

Graphical abstract: The maximum limiting performance improved counter electrode based on a porous fluorine doped tin oxide conductive framework for dye-sensitized solar cells

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DOI
https://doi.org/10.1039/C3NR33338H
Article type
Paper
Submitted
26 Oct 2012
Accepted
12 Jan 2013
First published
16 Jan 2013

Nanoscale, 2013,5, 4951-4957

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The maximum limiting performance improved counter electrode based on a porous fluorine doped tin oxide conductive framework for dye-sensitized solar cells

C. Bao, H. Huang, J. Yang, H. Gao, T. Yu, J. Liu, Y. Zhou, Z. Li and Z. Zou, Nanoscale, 2013, 5, 4951 DOI: 10.1039/C3NR33338H

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