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Issue 6, 2013
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Synthesis and characterization of p–n homojunction-containing zinc oxide nanowires

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Abstract

We illustrate a simple method to synthesize highly ordered ZnO axial p–n homojunction-containing nanowires using a low temperature method, and on a variety of substrates. X-ray diffraction, scanning transmission electron microscopy, scanning electron microscopy, and Raman spectroscopy are used to reveal high quality single-crystalline wires with a [001] growth direction. The study of electrical transport through a single nanowire based device and cathodoluminescence via scanning transmission electron microscopy demonstrates that an axial p–n junction exists within each ZnO nanowire. This represents the first low temperature synthesis of axial p–n homojunction-containing ZnO nanowires with uniform and controllable diameters.

Graphical abstract: Synthesis and characterization of p–n homojunction-containing zinc oxide nanowires

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Publication details

The article was received on 27 Jun 2012, accepted on 25 Jan 2013 and first published on 29 Jan 2013


Article type: Communication
DOI: 10.1039/C3NR31639D
Citation: Nanoscale, 2013,5, 2259-2263
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    Synthesis and characterization of p–n homojunction-containing zinc oxide nanowires

    G. Li, A. Sundararajan, A. Mouti, Y. Chang, A. R. Lupini, S. J. Pennycook, D. R. Strachan and B. S. Guiton, Nanoscale, 2013, 5, 2259
    DOI: 10.1039/C3NR31639D

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