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Issue 22, 2013
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Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells

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Abstract

We report on an analytical model which describes the bipolar resistive switching in electrochemical metallization cells. To simulate the resistive switching, we modeled the growth and dissolution of a metallic filament together with electron tunneling between the growing filament and the counter electrode. The model accounts for the controllability of the low resistive state and the RESET current by tuning the SET current. By analytical analysis the relevant conditions for these generic characteristics are identified. In addition, an explanation for the asymmetry in the SET and RESET switching characteristics is presented. The results of the analytical analysis is generalized to all types of ReRAMs.

Graphical abstract: Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells

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Publication details

The article was received on 02 Jul 2013, accepted on 26 Aug 2013 and first published on 30 Aug 2013


Article type: Paper
DOI: 10.1039/C3NR03387B
Citation: Nanoscale, 2013,5, 11003-11010
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    Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells

    S. Menzel and R. Waser, Nanoscale, 2013, 5, 11003
    DOI: 10.1039/C3NR03387B

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