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Issue 16, 2013
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Solution phase van der Waals epitaxy of ZnO wire arrays

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Abstract

As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization. Here we demonstrate van der Waals epitaxy in solution phase synthesis for seedless and catalyst-free growth of ZnO wire arrays on phlogopite mica at low temperature. A unique incommensurate interface is observed even with the incomplete initial wetting of ZnO onto the substrate. Interestingly, the imperfect contacting layer does not affect the crystalline and optical properties of other parts of the wires. In addition, we present patterned growth of a well-ordered array with hexagonal facets and in-plane alignment. We expect our seedless and catalyst-free solution phase van der Waals epitaxy synthesis to be widely applicable in other materials and structures.

Graphical abstract: Solution phase van der Waals epitaxy of ZnO wire arrays

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Publication details

The article was received on 22 Apr 2013, accepted on 08 May 2013 and first published on 13 May 2013


Article type: Paper
DOI: 10.1039/C3NR01984E
Citation: Nanoscale, 2013,5, 7242-7249
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    Solution phase van der Waals epitaxy of ZnO wire arrays

    Y. Zhu, Y. Zhou, M. I. Bakti Utama, M. D. L. Mata, Y. Zhao, Q. Zhang, B. Peng, C. Magen, J. Arbiol and Q. Xiong, Nanoscale, 2013, 5, 7242
    DOI: 10.1039/C3NR01984E

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