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Issue 2, 2013
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Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance

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Abstract

We report on the nanosheet-thickness effects on the performance of top-gate MoS2 field-effect transistors (FETs), which is directly related to the MoS2 dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al2O3 displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO2, benefiting from the dielectric screening by high-k Al2O3. Among the top-gate devices, the single-layered FET demonstrated the highest mobility of ∼170 cm2 V−1 s−1 with 90 mV dec−1 as the smallest subthreshold swing (SS) but the double- and triple-layered FETs showed only ∼25 and ∼15 cm2 V−1 s−1 respectively with the large SS of 0.5 and 1.1 V dec−1. Such property degradation with MoS2 thickness is attributed to its dielectric constant increase, which could rather reduce the benefits from the top-gate high-k dielectric.

Graphical abstract: Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance

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Publication details

The article was received on 07 Sep 2012, accepted on 28 Nov 2012 and first published on 03 Dec 2012


Article type: Communication
DOI: 10.1039/C2NR33443G
Citation: Nanoscale, 2013,5, 548-551
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    Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance

    S. Min, H. S. Lee, H. J. Choi, M. K. Park, T. Nam, H. Kim, S. Ryu and S. Im, Nanoscale, 2013, 5, 548
    DOI: 10.1039/C2NR33443G

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