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Issue 3, 2013
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Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices

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Abstract

In order to expand the use of nanoscaled silicon structures we present a new etching method that allows us to shape silicon with sub-10 nm precision. This top-down, CMOS compatible etching scheme allows us to fabricate silicon devices with quantum behavior without relying on difficult lateral lithography. We utilize this novel etching process to create quantum dots, quantum wires, vertical transistors and ultra-high-aspect ratio structures. We believe that this etching technique will have broad and significant impacts and applications in nano-photonics, bio-sensing, and nano-electronics.

Graphical abstract: Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices

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Publication details

The article was received on 28 Sep 2012, accepted on 11 Dec 2012 and first published on 13 Dec 2012


Article type: Communication
DOI: 10.1039/C2NR32981F
Citation: Nanoscale, 2013,5, 927-931
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    Three-dimensional etching of silicon for the fabrication of low-dimensional and suspended devices

    S. S. Walavalkar, A. P. Homyk, M. D. Henry and A. Scherer, Nanoscale, 2013, 5, 927
    DOI: 10.1039/C2NR32981F

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