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Issue 5, 2013
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A growth mechanism for graphene deposited on polycrystalline Co film by plasma enhanced chemical vapor deposition

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Abstract

Graphene is deposited on polycrystalline Co film by radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD), and the effect of deposition time on the crystallinity of graphene, such as graphitic degree and in-plane crystallite size, is explored. The findings are that graphene can be obtained on polycrystalline Co film for only 15 s, suggesting that a direct growth mechanism plays an important role in the formation of graphene. The first-principles density functional theory (DFT) results also reveal that the graphene is more easily formed on Co via a surface direct growth mechanism than that via a precipitation mechanism. Our studies are critical in guiding the graphene growth process as we try to achieve the highest quality graphene for electronic devices.

Graphical abstract: A growth mechanism for graphene deposited on polycrystalline Co film by plasma enhanced chemical vapor deposition

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Publication details

The article was received on 14 Dec 2012, accepted on 11 Mar 2013 and first published on 13 Mar 2013


Article type: Paper
DOI: 10.1039/C3NJ41136B
Citation: New J. Chem., 2013,37, 1616-1622
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    A growth mechanism for graphene deposited on polycrystalline Co film by plasma enhanced chemical vapor deposition

    S. Wang, L. Qiao, C. Zhao, X. Zhang, J. Chen, H. Tian, W. Zheng and Z. Han, New J. Chem., 2013, 37, 1616
    DOI: 10.1039/C3NJ41136B

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