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Issue 3, 2013
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Universal statistics of parasitic shunt formation in solar cells, and its implications for cell to module efficiency gap

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Abstract

Parasitic shunt formation is an important cause of variability and module efficiency loss in all photovoltaic technologies. In this letter, we quantify the nature of this shunt variability in four major thin film photovoltaic (TFPV) technologies, namely, amorphous silicon (a-Si:H), organic (OPV), Cu(In,Ga)SSe (CIGS), and CdTe. We analyze a wide variety of datasets to show that the shunt current exhibits a robust universal log-normal behavior for all these technologies. We affirm this conclusion by rigorous statistical analysis of the available data. We use equivalent circuit simulations to quantitatively illustrate the importance of this heavy-tailed distribution towards determining the universal gap between cell and module efficiency.

Graphical abstract: Universal statistics of parasitic shunt formation in solar cells, and its implications for cell to module efficiency gap

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Publication details

The article was received on 10 Oct 2012, accepted on 09 Jan 2013 and first published on 09 Jan 2013


Article type: Communication
DOI: 10.1039/C3EE24167J
Citation: Energy Environ. Sci., 2013,6, 782-787
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    Universal statistics of parasitic shunt formation in solar cells, and its implications for cell to module efficiency gap

    S. Dongaonkar, S. Loser, E. J. Sheets, K. Zaunbrecher, R. Agrawal, T. J. Marks and M. A. Alam, Energy Environ. Sci., 2013, 6, 782
    DOI: 10.1039/C3EE24167J

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