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Issue 7, 2013
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Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

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Abstract

We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.

Graphical abstract: Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

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Publication details

The article was received on 22 Dec 2012, accepted on 10 Apr 2013 and first published on 15 Apr 2013


Article type: Communication
DOI: 10.1039/C3EE24461J
Citation: Energy Environ. Sci., 2013,6, 2112-2118
  • Open access: Creative Commons BY license
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    Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells

    Y. S. Lee, J. Heo, S. C. Siah, J. P. Mailoa, R. E. Brandt, S. B. Kim, R. G. Gordon and T. Buonassisi, Energy Environ. Sci., 2013, 6, 2112
    DOI: 10.1039/C3EE24461J

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