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We report the synthesis and characterisation of a new family of copper(I) metal precursors based around alkoxy-N,N′-di-alkyl-ureate ligands, and their subsequent application in the production of pure copper thin films. The molecular structure of the complexes bis-copper(I)(methoxy-N,N′-di-isopropylureate) (1) and bis-copper(I)(methoxy-N,N′-di-cyclohexylureate)(5) are described, as determined by single crystal X-ray diffraction analysis. Thermogravimetric analysis of the complexes highlighted complex 1 as a possible copper CVD precursor. Low pressure chemical vapour deposition (LP-CVD) was employed using precursor 1, to synthesise thin films of metallic copper on ruthenium substrates under an atmosphere of hydrogen (H2). Analysis of the thin films deposited at substrate temperatures of 225 °C, 250 °C and 300 °C, respectively, by SEM and AFM reveal the films to be continuous and pin hole free, and show the presence of temperature dependent growth features on the surface of the thin films. Energy dispersive X-ray spectroscopy (EDX), powder X-ray diffraction (PXRD) and X-ray photoelectron spectroscopy (XPS) all show the films to be high purity metallic copper.
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