The applications of ferroelectric thin films such as the sensitivity of nonvolatile ferroelectric random access memories are closely linked with large remnant polarization. The high-TC (1−x)Bi(Zn1/2Zr1/2)O3–xPbTiO3 (x = 0.7–0.9) thin films with high (100) orientation were fabricated on Pt(111)/Ti/SiO2/Si substrates via a sol–gel method. The thin films could be crystallized well in a phase-pure perovskite structure. The electrical properties of the sol–gel-derived BZZ–PT thin films were investigated. A large remanent polarization with 2Pr up to 110 μC cm−2 and a small leakage current of 3.8 × 10−7 A cm−2 under an electric field of 150 kV cm−1 are observed on the 0.2BZZ–0.8PT thin films. Furthermore, a relatively stable polarization fatigue property was achieved, indicating a potential application in high-temperature ferroelectric devices.
Dalton Transactions
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