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Issue 47, 2013
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Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films

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Abstract

Field-effect transistors (FETs) based on [6]phenacene thin films were fabricated with SiO2 and parylene gate dielectrics. These FET devices exhibit field-effect mobility in the saturation regime as high as 7.4 cm2 V−1 s−1, which is one of the highest reported values for organic thin-film FETs. The two- and four-probe mobilities in the linear regime display nearly similar values, suggesting negligible contact resistance at 300 K. FET characteristics were investigated using two-probe and four-probe measurement modes at 50–300 K. The two-probe mobility of the saturation regime can be explained by the multiple shallow trap and release model, while the intrinsic mobility obtained by the four-probe measurement in the linear regime is better explained by the phenomenon of transport with charge carrier scattering at low temperatures. The FET device fabricated with a parylene gate dielectric on polyethylene terephthalate possesses both transparency and flexibility, implying feasibility of practical application of [6]phenacene FETs in flexible/transparent electronics. N-channel FET characteristics were also achieved in the [6]phenacene thin-film FETs using metals that possess a small work function for use as source/drain electrodes.

Graphical abstract: Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films

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Publication details

The article was received on 24 Aug 2013, accepted on 15 Oct 2013 and first published on 18 Oct 2013


Article type: Paper
DOI: 10.1039/C3CP53598C
Citation: Phys. Chem. Chem. Phys., 2013,15, 20611-20617
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    Fabrication of high performance/highly functional field-effect transistor devices based on [6]phenacene thin films

    R. Eguchi, X. He, S. Hamao, H. Goto, H. Okamoto, S. Gohda, K. Sato and Y. Kubozono, Phys. Chem. Chem. Phys., 2013, 15, 20611
    DOI: 10.1039/C3CP53598C

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