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Issue 5, 2013
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Preparation and characterization of CuInS2 nanocrystals for photovoltaic materials

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Abstract

Copper indium disulphide (CIS) nanocrystals (NCs) were prepared using a one-pot synthesis. The stoichiometry was optimized based on its current density as measured by photoelectrochemical (PEC) experiments at interfaces between NC films deposited on ITO and 0.1 M methyl viologen dichloride (MV2+) solution. This method also offers insight into the kinetics of the photoreaction. A copper poor sulphur rich starting ratio was found to produce a copper-rich, indium-poor and slightly sulphur rich material. Further NC characterization was performed with SEM and TEM to investigate the morphology and crystallinity of the 30–70 nm NCs. The oxidation states of the individual elements were determined to be I, III, and 2– for Cu, In and S, respectively. Characteristics of optimal as-prepared NCs were found to be compatible among high functioning absorbing layers.

Graphical abstract: Preparation and characterization of CuInS2 nanocrystals for photovoltaic materials

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Publication details

The article was received on 06 Aug 2012, accepted on 08 Oct 2012 and first published on 09 Oct 2012


Article type: Paper
DOI: 10.1039/C2CP42753B
Citation: Phys. Chem. Chem. Phys., 2013,15, 1431-1436
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    Preparation and characterization of CuInS2 nanocrystals for photovoltaic materials

    A. Tapley, D. Vaccarello, J. Hedges, F. Jia, D. A. Love and Z. Ding, Phys. Chem. Chem. Phys., 2013, 15, 1431
    DOI: 10.1039/C2CP42753B

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